Effect of the control of global planarity of intermetal dielectric layers on the lithographic process window

Shani Keysar; Leah Markowitz; Corin Ben-Gigi; Rama Tweg; Ayelet Margalit-Ilovich; Avishai Kepten; Amir Wachs; Roey Shaviv

doi:10.1117/12.350815

14 June 1999 Effect of the control of global planarity of intermetal dielectric layers on the lithographic process window

Shani Keysar, Leah Markowitz, Corin Ben-Gigi, Rama Tweg, Ayelet Margalit-Ilovich, Avishai Kepten, Amir Wachs, Roey Shaviv

Author Affiliations +

Proceedings Volume 3677, Metrology, Inspection, and Process Control for Microlithography XIII; (1999) https://doi.org/10.1117/12.350815
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

The sensitivity of lithographic process window to global planarity of the inter metal dielectric layers is established in this work. The inter metal dielectric layers, between the metal layers, were prepared by utilizing the H₂O₂/SiH₄ chemistry known as the 'Advanced Planarity Layer (APL)'. Four degrees of global planarity were tested within the APL process window, utilizing different H₂O₂ stabilization pressures. SEM cross sections were used to determine the degree of planarity in the CMOS product and at lithographic test structures. The lithographic process window and the effect of the stepper leveling system were defined for typical high and low topographies. The results how a strong link between the lithographic process window to degree of global planarity of the APL. Good global planarity enlarged depth of focus and energy latitude, allowing a wider lithographic process window. Also, in cases of improved APL planarity, the stepper leveling system had only a limited contribution to a lithographic process window. This control over the global planarity of the inter metal dielectric layers and the wide lithographic process window that results eliminate the need for CMP at 0.5 (mu) technology.

Citation Download Citation

Shani Keysar, Leah Markowitz, Corin Ben-Gigi, Rama Tweg, Ayelet Margalit-Ilovich, Avishai Kepten, Amir Wachs, and Roey Shaviv "Effect of the control of global planarity of intermetal dielectric layers on the lithographic process window", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350815

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Lithography

Metals

Dielectrics

Semiconducting wafers

Scanning electron microscopy

Chemical mechanical planarization

Optical lithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years