Paper
30 April 1999 Optical interconnects for high-speed data links
Chang Myung Ryu, Bernhard Ulrich Koelle, Shane R. Johnson, Philip Dowd, Raenaurd Datrion Turpin, Parag Kelkar, YongHang Zhang
Author Affiliations +
Abstract
We demonstrate the integration of vertical-cavity surface- emitting laser (VCSEL) arrays with Si-dummy chips for potential use in short-distance parallel optical interconnects. An 8 X 8 flip-chip bonded InGaAs VCSEL array was successfully modulated at data rates up to 0.8 Gbit/s/channel, corresponding to an aggregate data transmission capacity in excess of 50 Gbit/s. A 2 X 4 VCSEL array was indirectly flit-chip bonded to a Si substrate via a transparent glass carrier and package- limited data rates of 0.4 Gbit/s/channel were achieved. The large signal modulation bandwidth of these devices exceeded 2 Gbit/s. The electrical driving characteristics of the devices were found to be compatible with 3.3 V CMOS technology.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chang Myung Ryu, Bernhard Ulrich Koelle, Shane R. Johnson, Philip Dowd, Raenaurd Datrion Turpin, Parag Kelkar, and YongHang Zhang "Optical interconnects for high-speed data links", Proc. SPIE 3631, Optoelectronic Integrated Circuits and Packaging III, (30 April 1999); https://doi.org/10.1117/12.348313
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Silicon

Modulation

Gallium arsenide

Glasses

Indium

Optical interconnects

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