1850 A/W responsivity in optically controlled MOSFET by illumination of 1.5 um wavelength light

Yuichi Nitta; Tomonari Yamagata; Yohei Takano; Kazuhiko Shimomura

doi:10.1117/12.342793

19 March 1999 1850 A/W responsivity in optically controlled MOSFET by illumination of 1.5 μm wavelength light

Yuichi Nitta, Tomonari Yamagata, Yohei Takano, Kazuhiko Shimomura

Proceedings Volume 3630, Silicon-based Optoelectronics; (1999) https://doi.org/10.1117/12.342793
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

The gate length dependencies of the optical response characteristics in the optically controlled MOSFET have measured. This device was the integrated structure of absorption region and MOSFET region by using direct wafer bonding technique. By reducing the gate length of MOSFET region, the transconductance of FET channel was increased, and we obtained high current modulation and responsivity by irradiation of 1.5 micrometer wavelength light.

Citation Download Citation

Yuichi Nitta, Tomonari Yamagata, Yohei Takano, and Kazuhiko Shimomura "1850 A/W responsivity in optically controlled MOSFET by illumination of 1.5 μm wavelength light", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); https://doi.org/10.1117/12.342793

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