Paper
7 April 1999 Structural quality of the interface seed crystal in rapidly grown KDP crystals for high-power lasers
Vitaly I. Salo, V. F. Tkachenko, Marina I. Kolybayeva
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Abstract
Structural quality of the interface 'seed crystal' of rapid grown KDP crystals was studied by the X-ray diffraction method with high resolution. The presence of a transitional zone seed - crystal more than 12 mm in width, with an increased concentration of defects and nonmonotone variation of the crystal lattice parameter was found. Found and determines was the turn angle between two growth sectors which makes approximately 32 arcs. It was shown that formation of defects at growing the crystal in the directions and produces a significant effect on structural quality of the crystal grown in the direction. The main growth defects of structure were found to be impurity striation a low angle quasi-boundaries caused by the mechanisms of layer-by-layer growth of crystals.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vitaly I. Salo, V. F. Tkachenko, and Marina I. Kolybayeva "Structural quality of the interface seed crystal in rapidly grown KDP crystals for high-power lasers", Proc. SPIE 3578, Laser-Induced Damage in Optical Materials: 1998, (7 April 1999); https://doi.org/10.1117/12.344375
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KEYWORDS
Crystals

Laser crystals

High power lasers

X-ray diffraction

X-rays

Crystallography

Laser damage threshold

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