Paper
12 August 1998 GaAs 1x4 optical power splitter
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Abstract
In this paper, an optical power splitter based on MMI coupler in GaAs/GaAlAs heterostructure materials is fabricated. The epitaxial materials are grown by MBE. The dry etching process is applied to fabricate the ribs in this device. The measuring results are presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jianyi Yang and Minghua Wang "GaAs 1x4 optical power splitter", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); https://doi.org/10.1117/12.317987
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Cited by 1 scholarly publication.
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KEYWORDS
Brain-machine interfaces

Dry etching

Gallium arsenide

Geometrical optics

Waveguides

Fabrication

Heterojunctions

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