Paper
1 September 1998 Properties of polycrystalline diamond as x-ray mask
Jeng Tzong Sheu, G. Y. Yang, B. R. Huang
Author Affiliations +
Proceedings Volume 3512, Materials and Device Characterization in Micromachining; (1998) https://doi.org/10.1117/12.324054
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States
Abstract
1.5 micrometer thick polycrystalline diamond film was deposited using microwave plasma chemical vapor deposition (MPCVD) as x-ray mask membrane with 0.1 approximately 0.25 micrometer seeding. The temperature is controlled between 820 to 830 degree Celsius and the ratios of CH4/H2 gas mixtures are varied for the quality and stress of the diamond film. The optical properties and radiation damage of the membrane will be demonstrated. Low tensile stress diamond membrane has been formed with backside KOH etching. Surface morphology was monitored by the AFM and the quality of the diamond film was measured by the Raman spectroscopy.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeng Tzong Sheu, G. Y. Yang, and B. R. Huang "Properties of polycrystalline diamond as x-ray mask", Proc. SPIE 3512, Materials and Device Characterization in Micromachining, (1 September 1998); https://doi.org/10.1117/12.324054
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Cited by 3 scholarly publications.
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KEYWORDS
Diamond

X-rays

Photomasks

Semiconducting wafers

Raman spectroscopy

Silicon

Etching

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