Metal-induced oxide degradation studied by surface photovoltage and mercury-probe measurements

Antonio Cacciato; S. Evseev; S. Vleeshouwers; I. Rink

doi:10.1117/12.324377

28 August 1998 Metal-induced oxide degradation studied by surface photovoltage and mercury-probe measurements

Antonio Cacciato, S. Evseev, S. Vleeshouwers, I. Rink

Proceedings Volume 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV; (1998) https://doi.org/10.1117/12.324377
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

In this paper we study oxide deterioration caused by metal contamination using the Mercury-probe and the Surface Photovoltage techniques. It is found that deterioration caused by metal concentration as low as approximately equals 10¹⁰ cm^-2 can be monitored performing stepped current measurements. This sensitivity makes the Mercury-probe technique attractive for fast-feedback evaluation of gate oxide integrity.

Citation Download Citation

Antonio Cacciato, S. Evseev, S. Vleeshouwers, and I. Rink "Metal-induced oxide degradation studied by surface photovoltage and mercury-probe measurements", Proc. SPIE 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV, (28 August 1998); https://doi.org/10.1117/12.324377

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