Etching of dual-damascene oxide structures in a medium-density oxide etch reactor

Eric Wagganer; George Mueller; Stephen F. Clark; Kenneth J. Newton

doi:10.1117/12.324028

4 September 1998 Etching of dual-damascene oxide structures in a medium-density oxide etch reactor

Eric Wagganer, George Mueller, Stephen F. Clark, Kenneth J. Newton

Proceedings Volume 3508, Multilevel Interconnect Technology II; (1998) https://doi.org/10.1117/12.324028
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

This paper presents the work done to develop a self-aligned, dual-damascene etch in a medium-density (approximately X 10¹⁰ ion/cm³) oxide etch reactor. The systematic study of etch results was guided by the process performance criteria (See Table 1) and wafer material provided by Texas Instruments. This work was performed on a Lam Research Corporation 4520XLE^TM dual-frequency Reactive Ion Etch (RIE) tool. As shown in Figure 1, RF power applied to the upper electrode at a frequency of 27 MHz primarily serves to generate the medium-density plasma. RF applied to the lower electrode at a frequency of 2 MHz primarily controls the relative ion energy. The final process results indicate feasibility using a process with discrete steps for trench, via and nitride removal portions of the dual damascene structure. (See Figure 2)

Citation Download Citation

Eric Wagganer, George Mueller, Stephen F. Clark, and Kenneth J. Newton "Etching of dual-damascene oxide structures in a medium-density oxide etch reactor", Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); https://doi.org/10.1117/12.324028

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