Mid-IR light emitting diodes using InAs, InAs1-yPxSby epilayers on InAs (100)

Nelson L. Rowell; Tomuo Yamaguchi; X. Y. Gong; Hirofumi Kan

doi:10.1117/12.328742

4 December 1998 Mid-IR light-emitting diodes using InAs, InAs_1-yP_xSb_y, and InAs_1-x-yP_xSb_y epilayers on InAs (100)

Nelson L. Rowell, Tomuo Yamaguchi, X. Y. Gong, Hirofumi Kan

Proceedings Volume 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications; (1998) https://doi.org/10.1117/12.328742
Event: 1998 International Conference on Applications of Photonic Technology, 1998, Ottawa, Canada

Abstract

The development of mid-infrared optoelectronic emitters and detectors is important for long-wave photonic applications. We report mid-IR emission spectra for three types of narrow- gap III-V light emitting diodes consisting of n^-/p^-InAs homojunctions and of n^-InAs_1-ySb_y/p^-InAs_1-ySb_y, and n^-InAs/p^-InAs_1-x-yP_xSb_y heterojunctions all grown by liquid phase epitaxy on InAs (100) substrates. Spectra were obtained under forward bias for photon energies between 300 and 425 meV (4.1 - 2.9 micrometers ), temperatures from 5 to 292 K, and bias currents from 20 (mu) A to 12 mA. Comparison are made with photoluminescence spectra from similar material.

Citation Download Citation

Nelson L. Rowell, Tomuo Yamaguchi, X. Y. Gong, and Hirofumi Kan "Mid-IR light-emitting diodes using InAs, InAs_1-yP_xSb_y, and InAs_1-x-yP_xSb_y epilayers on InAs (100)", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328742

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