Dark current mechanisms in HgCdTe photodiodes

Yan-Kuin Su; Shoou-Jinn Chang; Fuh-Shyang Juang; C. D. Chiang; Y. T. Cherng; S. M. Chang

doi:10.1117/12.311016

22 June 1998 Dark current mechanisms in HgCdTe photodiodes

Yan-Kuin Su, Shoou-Jinn Chang, Fuh-Shyang Juang, C. D. Chiang, Y. T. Cherng, S. M. Chang

Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190W (1998) https://doi.org/10.1117/12.311016
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

Experimental and theoretical results are presented for current-voltage and dynamic resistance-voltage characteristics of Hg_1-xCd_xTe ion-implanted p-n junction photodiodes with x approximately equals 0.22. By measuring the temperature dependence of the dc characteristics in the temperature range 25-140K, the dark current mechanism are studied. At high temperature and in low reverse bias region, the diffusion current dominates. On the other hand, at medium temperature and medium reverse bias, trap-assisted tunneling plays an important role. At low temperature and in the medium reverse bias region, band-to-band tunneling is the key leakage current source.However, when the temperature is further lowed down to 25K and the applied reverse bias is very small, the band-to-band tunneling current will be ruled out and the trap-assisted tunneling mechanism dominates again. We have measured 1/f noise in HgCdTe photodiode as a function of temperature, diode bias, dark current. The dependence of 1/f noise on dark current was measured over a wide temperature range on devices. The temperature dependence of the 1/f noise was found to be the same as the temperature dependence of the surface generation and leakage currents. We obtained the maximum specific detectivity value and the maximum signal-to-noise ratio are about 3.51 X 10¹⁰ cm Hz^1/2/W and 5096 respectively.

Citation Download Citation

Yan-Kuin Su, Shoou-Jinn Chang, Fuh-Shyang Juang, C. D. Chiang, Y. T. Cherng, and S. M. Chang "Dark current mechanisms in HgCdTe photodiodes", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190W (22 June 1998); https://doi.org/10.1117/12.311016

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KEYWORDS

Photodiodes

Mercury cadmium telluride

Signal to noise ratio

Temperature metrology

Cadmium

Diffusion

Diodes

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