Ion implantation: an efficient method for doping or fabricating channel chalcogenide glass waveguides

Chiara Meneghini; Karine Le Foulgoc; Emile J. Knystautas; Alain Villeneuve; Thierry Cardinal; Kathleen A. Richardson

doi:10.1117/12.321943

17 September 1998 Ion implantation: an efficient method for doping or fabricating channel chalcogenide glass waveguides

Chiara Meneghini, Karine Le Foulgoc, Emile J. Knystautas, Alain Villeneuve, Thierry Cardinal, Kathleen A. Richardson

Proceedings Volume 3413, Materials Modification by Ion Irradiation; (1998) https://doi.org/10.1117/12.321943
Event: Lasers and Materials in Industry and Opto-Contact Workshop, 1998, Quebec, Canada

Abstract

In this paper we present two different applications of ion implantation in chalcogenide glasses: rare earth doping and channel waveguide fabrication. The luminescence of a neodymium-implanted arsenic tri-sulfide waveguide at 1083 nm is reported. The most efficient pump wavelength is determined to be 818 nm. The dopant distribution following ion implantation is predicted by molecular dynamic simulation and measured by Rutherford Backscattering Spectrometry. This observation of luminescence from rare- earth ion implantation into chalcogenide glass suggest that this technique can be useful for rare-earth doped devices. A study of neodymium luminescence peak power as a function of dopant concentration is reported. The second application of ion implantation is in the fabrication of channel waveguides by helium implantation.

Citation Download Citation

Chiara Meneghini, Karine Le Foulgoc, Emile J. Knystautas, Alain Villeneuve, Thierry Cardinal, and Kathleen A. Richardson "Ion implantation: an efficient method for doping or fabricating channel chalcogenide glass waveguides", Proc. SPIE 3413, Materials Modification by Ion Irradiation, (17 September 1998); https://doi.org/10.1117/12.321943

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