Paper
29 June 1998 Optimizing image transfer into AZ BARLi bottom coat for submicron i-line lithography
Alberto Caligiore, Marco Valtolina, Alberto Cipolli, Arialdo Monguzzi, Fred Mohr, Mark A. Spak, Ralph R. Dammel
Author Affiliations +
Abstract
The use of bottom antireflective coatings is one of the techniques that enable the fab engineer to extend the life of conventional i-line lithography into the deep submicron range. Spin-on antireflective coatings are highly effective in reducing the swing curve as well as standing wave and notching phenomena, and can be made to show extensive planarization. However, organic spin-on BARCs show lower etch selectivity than inorganic layers, so that they require specific attention in the dry etch image transfer step due to the potential for resist film loss. In this paper, we show that the interplay between the characteristics of wet developed features and of the dry etch image transfer step can be utilized to expand the process window for both isolated and dense lines in a 0.34 micrometers i-line production process.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alberto Caligiore, Marco Valtolina, Alberto Cipolli, Arialdo Monguzzi, Fred Mohr, Mark A. Spak, and Ralph R. Dammel "Optimizing image transfer into AZ BARLi bottom coat for submicron i-line lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312388
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KEYWORDS
Image processing

Etching

Reactive ion etching

Lithography

Dry etching

Submicron lithography

Antireflective coatings

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