New approach to 193-nm photoresists: polyspironorbornane polymers

Robert P. Meagley; Linus Y. Park; Jean M. J. Frechet

doi:10.1117/12.312471

29 June 1998 New approach to 193-nm photoresists: polyspironorbornane polymers

Robert P. Meagley, Linus Y. Park, Jean M. J. Frechet

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312471
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

We introduce here a novel approach to highly EUV transparent, carbon dense polymers for application as photoresist materials. The backbone of the prototype polymer consists of bicyclic hydrocarbons spiro-fused to cyclohexane moieties decorated with pendant t-butyl esters. This high polymer is formed through the free radical cyclopolymerization of functionalized norbornane derivatives. Imaging experiments conducted at 193 nm demonstrate features below 0.15 microns.

Citation Download Citation

Robert P. Meagley, Linus Y. Park, and Jean M. J. Frechet "New approach to 193-nm photoresists: polyspironorbornane polymers", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312471

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