Paper
5 June 1998 Mask and wafer inspection and cleaning for proximity x-ray lithography
Jeffrey A. Leavey, Pawitter J. S. Mangat
Author Affiliations +
Abstract
Over the past five years that eh IBM Advanced Lithography Facility (ALF) has been operational, we have learned much about the practical aspects of proximity x-ray lithography: synchrotron reliability; mask manufacturing; process development; and mask and wafer handling, inspection, and cleaning. Because proximity x-ray printing requires small mask-to-wafer gaps, the primary concern is protecting the mask from large foreign material (FM). Particle heights greater than the gap represent a mask scratch or breakage risk that must be managed. ALF, the IBM Advanced Mask Facility (AMF), and the Proximity x-ray Lithography Association have developed techniques for inspection and cleaning of masks and wafers to address both large and small FM concerns. This paper will review the practical implementation of inspection and cleaning techniques as presently used in ALF and AMF.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey A. Leavey and Pawitter J. S. Mangat "Mask and wafer inspection and cleaning for proximity x-ray lithography", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309571
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Fermium

Frequency modulation

Semiconducting wafers

Inspection

X-ray lithography

X-rays

RELATED CONTENT

Present status of x-ray lithography
Proceedings of SPIE (September 01 1998)
Diamond membranes for x-ray lithography
Proceedings of SPIE (December 01 1990)

Back to Top