Paper
5 June 1998 Imaging interferometric lithography for arbitrary patterns
Xiaolan Chen, Steven R. J. Brueck
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Abstract
Conventional optical lithography (OL) is limited by the spatial frequency coverage of the optical system. Inter- ferometric lithography (IL), which approaches the ultimate linear system spatial frequency coverage limit of optics, provides a simple technique to produce periodic patterns at the requisite scale for the next several ULSI generations. Imaging interferometric lithography (IIL), a true integration of optical and interferometric lithography, extends this capability to arbitrary pattern fabrication. Modeling and simulation results show that arbitrary patterns with dense CDs extending to 120-nm at I-line and to 65-nm at a 193-nm exposure wavelength are possible. Initial experiments demonstrate that the coverage in frequency space is increased for a 3-exposure IIl configuration and the resolution is concomitantly increased by a factor of 3. Development of IIL may extend the life of optical lithography to sub-100-nm CD generations.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaolan Chen and Steven R. J. Brueck "Imaging interferometric lithography for arbitrary patterns", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309621
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CITATIONS
Cited by 7 scholarly publications and 1 patent.
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KEYWORDS
Spatial frequencies

Interferometry

Lithography

Photomasks

Semiconducting wafers

Imaging systems

Optical lithography

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