Visible electroluminescence in Si/adsorbed gas superlattice

Raphael Tsu; Qi Zhang; Adam Filios

doi:10.1117/12.298247

22 December 1997 Visible electroluminescence in Si/adsorbed gas superlattice

Raphael Tsu, Qi Zhang, Adam Filios

Proceedings Volume 3290, Optoelectronic Integrated Circuits II; (1997) https://doi.org/10.1117/12.298247
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We report a strong and extremely stable electroluminescence (EL) from silicon based EL device. The active layer of the device utilizes a crystalline Si/O superlattice, grown by molecular beam epitaxy with in-situ oxygen exposure. Oxygen exposure is used to limit the growth of oxides to a monolayer in order to continue the silicon epitaxial growth and to create a highly localized interaction between the oxygen and silicon atoms. The visible EL is peaked at 1.8 - 2 eV, showing no degradation in a six month life-test under continuous operation, longer than other silicon based schemes in the literature. The efficacy of both photoluminescence and electroluminescence is similar to better than that from porous silicon. The robustness and stability of the c-Si/O superlattice opens the door for a silicon chip combining IC with integrated optics.

Citation Download Citation

Raphael Tsu, Qi Zhang, and Adam Filios "Visible electroluminescence in Si/adsorbed gas superlattice", Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); https://doi.org/10.1117/12.298247

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