AlGaInAs/InP ridge-guide lasers operating at 1.55 um

Gary A. Evans; Jieh-Ping Sih; T. M. Chou; Jay B. Kirk; Jerome K. Butler; Lily Y. Pang

doi:10.1117/12.304443

7 April 1998 AlGaInAs/InP ridge-guide lasers operating at 1.55 μm

Gary A. Evans, Jieh-Ping Sih, T. M. Chou, Jay B. Kirk, Jerome K. Butler, Lily Y. Pang

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304443
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The InGaAsP/InP material system has a large conduction band offset ((Delta) E_c equals 0.72 (Delta) E_g which provides strong electron confinement and prevents carrier overflow under high temperature operation. Therefore, AlGaInAs/InP lasers have better performance at high temperature operation.

Citation Download Citation

Gary A. Evans, Jieh-Ping Sih, T. M. Chou, Jay B. Kirk, Jerome K. Butler, and Lily Y. Pang "AlGaInAs/InP ridge-guide lasers operating at 1.55 μm", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304443

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