Coherent electric-field effects in semiconductors

Torsten Meier; K.-C. Je; F. Rossi; Joerg Hader; P. Thomas; Stephan W. Koch

doi:10.1117/12.306150

23 April 1998 Coherent electric-field effects in semiconductors

Torsten Meier, K.-C. Je, F. Rossi, Joerg Hader, P. Thomas, Stephan W. Koch

Proceedings Volume 3277, Ultrafast Phenomena in Semiconductors II; (1998) https://doi.org/10.1117/12.306150
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

A microscopic many-body theory is presented which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of static and time-dependent electric fields applied in the growth direction. For static fields the Bloch-oscillation dynamics, the role of Coulomb effects, carrier relaxation, phonon scattering, and inter- and intraband polarization dephasing is analyzed. The observability of dynamic localization using optical spectroscopy is discussed for alternating applied fields.

Citation Download Citation

Torsten Meier, K.-C. Je, F. Rossi, Joerg Hader, P. Thomas, and Stephan W. Koch "Coherent electric-field effects in semiconductors", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306150

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