Paper
15 September 1982 Shallow Proton Striped GaAlAs Lasers Grown By Metalorganic Chemical Vapor Deposition (MOCVD)
R D. Burnham, D. R. Scifres, W. Streifer
Author Affiliations +
Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934282
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
Stripe geometry lasers grown by MO-CVD lasing at 8260 Å (-7% Al in the active region) were characterized. Pulsed current thresholds vary little with stripe width for 4, 6, and 8 microns. The lowest pulsed threshold was 31 mA for a 125-µm-long device. This laser with a 6 μm stripe exhibited a kink-free light output vs. current characteristic up to 15 mW/facet and had a differential quantum efficiency nD ≈ 76%. The threshold currents and the increase of laser threshold with increasing cavity length were found to be significantly lower than those of previously-published devices. For 51 lasers that are 200±10 μm long with 4, 6, or 8 μm stripe widths, the average threshold currents were 40.4 mA, 41.1 mA, and 42 mA, respectively, and 37 of these lasers fall within ±1 mA of these averages. External differential quantum efficiencies for these same lasers are 75%, 67%, and 63%, respectively.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R D. Burnham, D. R. Scifres, and W. Streifer "Shallow Proton Striped GaAlAs Lasers Grown By Metalorganic Chemical Vapor Deposition (MOCVD)", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934282
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KEYWORDS
Laser damage threshold

Quantum efficiency

Metalorganic chemical vapor deposition

Liquid phase epitaxy

Semiconductor lasers

Molybdenum

Semiconducting wafers

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