Paper
18 August 1997 Influence of laser deposition conditions on optical properties of silicon composite films
Ivan Z. Indutnyi, E. B. Kaganovich, A. A. Kudryavtsev, E. G. Manoilov, George S. Svechnikov
Author Affiliations +
Proceedings Volume 3184, Microelectronic Packaging and Laser Processing; (1997) https://doi.org/10.1117/12.280577
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore
Abstract
In this paper the main optical properties of Si nanocrystalline films prepared by pulse laser deposition of Si in N2 or He atmosphere were reviewed. Both reflectance and transmission spectra were measured in the range of 200-1200nm and were used for calculation of films optical constants. It has been shown that films have composite structure and contain Si nanocrystallites in SiOxNy matrix. Obtained visible photoluminescence of these films is related to quantum confinement in Si dots.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivan Z. Indutnyi, E. B. Kaganovich, A. A. Kudryavtsev, E. G. Manoilov, and George S. Svechnikov "Influence of laser deposition conditions on optical properties of silicon composite films", Proc. SPIE 3184, Microelectronic Packaging and Laser Processing, (18 August 1997); https://doi.org/10.1117/12.280577
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KEYWORDS
Silicon

Composites

Optical properties

Semiconductor lasers

Silicon films

Atmospheric optics

Luminescence

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