Quantum approach to vapor phase growth mechanism of diamond film

Guang-Pu Wei; Takashi Kita; H. Hakayama; Taneo Nishino

doi:10.1117/12.300730

20 February 1998 Quantum approach to vapor phase growth mechanism of diamond film

Guang-Pu Wei, Takashi Kita, H. Hakayama, Taneo Nishino

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300730
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

The growth mechanism of diamond films from low pressure vapor phase synthesis cannot be illustrated with classical thermodynamic theory. Up to now, a lot of growth methods were reported, but the growth mechanism was not so clear. In this paper, a variety of growth methods and growth conditions were summarized, and some tries to illustrate the growth mechanism of diamond film from the consideration of quantum mechanics bond theory were carried out. Particularly, some effects of atomic H and SP³ bond on the growth mechanism of diamond film were illustrated.

Citation Download Citation

Guang-Pu Wei, Takashi Kita, H. Hakayama, and Taneo Nishino "Quantum approach to vapor phase growth mechanism of diamond film", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300730

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