Paper
20 February 1998 Interface electrical characteristics of passivation films on HgCdTe
X. C. Zhang, Guozhen Zheng, Shaoling Guo, Yongsheng Gui, Junhao Chu
Author Affiliations +
Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300664
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
A new passivation film: evaporated CdTe/ZnS combination film was grown on HgCdTe and the interface was characterized by capacitance-voltage (CV) characteristics of metal-insulator- semiconductor (MIS) test structures. Under proper processing conditions, the interface electrical parameters are: density of fixed charge approximately -4.0 X 1010 cm-2, density of slow state approximately 5.1 X 1010cm-2, density of fast interface state approximately 2.7 X 1011cm-2eV-1, and the time stability is good. These results show CdTe/ZnS double layer film is suitable for passivation of HgCdTe infrared detectors. We have also investigated single layer ZnS and anodic oxide/CdTe/ZnS triple layer film and found that the time stability of ZnS isn't good, and there exists too high density of fixed positive charge at the triple layer film//HgCdTe interface.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
X. C. Zhang, Guozhen Zheng, Shaoling Guo, Yongsheng Gui, and Junhao Chu "Interface electrical characteristics of passivation films on HgCdTe", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300664
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KEYWORDS
Mercury cadmium telluride

Zinc

Infrared detectors

Semiconductors

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