Paper
7 July 1997 Comparative study of positive chemically amplified photoresist performance for x-ray and DUV lithography
Azalia A. Krasnoperova, Hiroshi Ito, Gregory Breyta, Debra Fenzel-Alexander
Author Affiliations +
Abstract
In this paper, experimental formulations of ESCAP photoresist with two different photoacid generators (PAG) are compared for x-ray and DUV (248 nm) exposures. Sensitivities, chemical contrasts and development selectivities have been derived from dissolution rate and FTIR data collected under similar process conditions. X-ray exposed experimental resists are also compared to a commercial UVIIHS photoresist. Linewidth performances of the x-ray exposed resists are presented at 175 nm ground rules. Relationships between the photoresists contrasts (both chemical and development), dissolution rates of fully exposed and unexposed resists, aerial image properties and linewidth exposure budget are discussed. Effect of a dissolution inhibitor on x-ray linewidth performance is shown.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Azalia A. Krasnoperova, Hiroshi Ito, Gregory Breyta, and Debra Fenzel-Alexander "Comparative study of positive chemically amplified photoresist performance for x-ray and DUV lithography", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275871
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KEYWORDS
X-rays

Deep ultraviolet

X-ray lithography

Photoresist materials

Lithography

Photomasks

Photoresist developing

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