Recent progress in AlGaN/GaN-based optoelectronic devices

Mohamed Asif Khan; Michael S. Shur

doi:10.1117/12.264214

22 January 1997 Recent progress in AlGaN/GaN-based optoelectronic devices

Mohamed Asif Khan, Michael S. Shur

Author Affiliations +

Proceedings Volume 3006, Optoelectronic Integrated Circuits; (1997) https://doi.org/10.1117/12.264214
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Unique optical and electronic properties of the InGaN/GaN/AlGaN material system open up numerous opportunities for visible-blind optoelectronic devices. GaN based optoelectronic devices include InGaN-AlGaN light emitting diodes (LEDs), GaN photoconductive, Schottky barrier, and p-n junction ultraviolet detectors, and optoelectronic AlGaN-GaN heterostructure field effect transistors. These devices have a high sensitivity and a large gain-bandwidth product and can be integrated with GaN/AlGaN field effect transistors which have already demonstrated an operation at microwave frequencies. GaN and related materials (which include AlN, InN, and AlGaN and InGaN solid state solutions) span the range from visible to UV. Since these are direct gap materials, they are better suited for optoelectronic applications than SiC polytypes. In this paper, we review our recent results on GaN based optoelectronic devices, which were obtained using a spinel substrate. GaN films grown on sapphire are rotated by 30 degrees with respect to the sapphire substrate. This makes it practically impossible to cleave parallel surfaces needed for GaN-based lasers, which have been using vertical cavity surface emission laser (VCSEL) design. The spinel (MgAl₂O₄) cubic (111) substrates have a common cleave direction with the grown GaN epilayer. These substrates have a smaller lattice mismatch (approximately 9%) with GaN, and we recently demonstrated that GaN layers deposited over these substrates have a similar or better quality compared to GaN layers grown on sapphire.

Citation Download Citation

Mohamed Asif Khan and Michael S. Shur "Recent progress in AlGaN/GaN-based optoelectronic devices", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264214

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE