High-temperature 1.55-um vertical-cavity lasers through wafer fusion

Near M. Margalit; Klaus P. Streubel; Yijen Chiu; Eric R. Hegblom; Hong Q. Hou; John Edward Bowers; Evelyn L. Hu

doi:10.1117/12.271064

4 April 1997 High-temperature 1.55-um vertical-cavity lasers through wafer fusion

Near M. Margalit, Klaus P. Streubel, Yijen Chiu, Eric R. Hegblom, Hong Q. Hou, John Edward Bowers, Evelyn L. Hu

Proceedings Volume 3003, Vertical-Cavity Surface-Emitting Lasers; (1997) https://doi.org/10.1117/12.271064
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

In this work we report on 64 degree celsius continuous-wave operation of a 1.5 micrometer vertical cavity laser. This laser consists of two fused Al(Ga)As/GaAs mirrors with a strain-compensated InGaAsP/InP active region. Selective lateral oxidation is used for current confinement. Minimum room temperature threshold current is as low as 0.8 mA, and maximum cw output power is as high as 1 mW at 15 degrees Celsius. Pulsed operation is achieved up to 100 degrees Celsius.

Citation Download Citation

Near M. Margalit, Klaus P. Streubel, Yijen Chiu, Eric R. Hegblom, Hong Q. Hou, John Edward Bowers, and Evelyn L. Hu "High-temperature 1.55-um vertical-cavity lasers through wafer fusion", Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); https://doi.org/10.1117/12.271064

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