Photocurrent spectrum of p-i-n Zn1-xCdxSe/ZnSe multiple quantum well heterostructures

Jiu Yao Tang; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

doi:10.1117/12.252944

3 October 1996 Photocurrent spectrum of p-i-n Zn1-xCdxSe/ZnSe multiple quantum well heterostructures

Jiu Yao Tang, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita

Proceedings Volume 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications; (1996) https://doi.org/10.1117/12.252944
Event: Photonics China '96, 1996, Beijing, China

Abstract

Photocurrent spectrum (PC) is reported both at room temperature and at 77 K on p-i-n Zn_1-xCd_xSe/ZnSe multiple quantum well heterostructures (x approximately equals 0.12) grown by molecular beam epitaxy. Almost all the exciton transitions, allowed and forbidden, associated with the two lowest electron and three highest hole subbands are clearly observed. With the increase of well width from 22 angstrom to 54 angstrom, an evolution of excitonic structure in PC spectra is demonstrated. Theoretical calculations show a quite good agreement with the measurement results, and from the comparison between theory and experiment, an exiton binding energy for heavy hole of 28 meV, and for light hole of 20 meV are obtained for this type of quantum wells.

Citation Download Citation

Jiu Yao Tang, Yoichi Kawakami, Shizuo Fujita, and Shigeo Fujita "Photocurrent spectrum of p-i-n Zn1-xCdxSe/ZnSe multiple quantum well heterostructures", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); https://doi.org/10.1117/12.252944

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KEYWORDS

Excitons

Quantum wells

Heterojunctions

Photons

Cadmium

Absorption

Gallium arsenide

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