Paper
24 July 1996 Evaluation of performance of attenuated phase-shift mask using simulation
Yuhichi Fukushima, Nobuhiko Fukuhara, Kohsuke Ueyama
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Abstract
We evaluated printability of notch defects and accuracy of repaired defects in attenuated phase shift masks (=attenuated PSMs) by using the photo intensity simulation. It is shown that the defect in attenuated PSMs brought about the change in the pattern shape of an aerial image on a wafer and affected on the adjacent pattern. It is necessary to repair notch defects in a straight line pattern in a mask even if the size of the defect is minute, because just a small distortion of the transcribed pattern image is severely judged as a defect. The simulation was executed by the optical conditions of wavelength λ = 248nm, NA = 0.5, coherency σ = 0.3 and masks are 5x reticles. We are obtained the results that it is necessary to repair the defects of the size of 0.5 μm or more. Moreover, when the defect was repaired by the shading part so far, the distortion remained in the transcribed pattern image. We examined what the repaired shape is good to solve this problem.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuhichi Fukushima, Nobuhiko Fukuhara, and Kohsuke Ueyama "Evaluation of performance of attenuated phase-shift mask using simulation", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245210
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

Distortion

Phase shifts

Reticles

Semiconducting wafers

Diffraction

Transmittance

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