Structure and properties of porous GaAs

Yu. N. Buzynin; S. A. Gusev; M. N. Drozdov; Yu. N. Drozdov; Z. F. Krasilnik; A. V. Murel; Dmitry G. Revin; Vladimir I. Shashkin; I. Yu. Shuleshova

doi:10.1117/12.232225

11 March 1996 Structure and properties of porous GaAs

Yu. N. Buzynin, S. A. Gusev, M. N. Drozdov, Yu. N. Drozdov, Z. F. Krasilnik, A. V. Murel, Dmitry G. Revin, Vladimir I. Shashkin, I. Yu. Shuleshova

Author Affiliations +

Proceedings Volume 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics; (1996) https://doi.org/10.1117/12.232225
Event: ALT '95 International Conference: Advanced Materials for Optics and Optoelectronics, 1995, Prague, Czech Republic

Abstract

In this paper we report the first results obtained in the study on the properties of porous GaAs (P-GaAs) produced by electrochemical etching in electrolytes on the basis of hydrofluoric acid. As the initial material we used monocrystalline n- and p-type (100)GaAs substrates Te- and Zn-doped to 2*10¹⁸ cm^-3 and 6*10¹⁸ cm^-3, respectively. The substrates were subjected to chemical-mechanical and diamond-paste polish. Etching was performed in an electrolytic cell with a platinum cathode in the galvanostatic regime with anode current densities ranging from 5 to 150 mA/cm². We were interested in P-GaAs layers with thicknesses from 0.5 to 50 micrometers. The methods used in the study of P-GaAs samples included x-ray diffractometry, electron microscopy, x-ray microanalysis, secondary ion-mass spectroscopy, electrochemical C-V profiling and photoluminescence.

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Yu. N. Buzynin, S. A. Gusev, M. N. Drozdov, Yu. N. Drozdov, Z. F. Krasilnik, A. V. Murel, Dmitry G. Revin, Vladimir I. Shashkin, and I. Yu. Shuleshova "Structure and properties of porous GaAs", Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); https://doi.org/10.1117/12.232225

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