Reactive laser ablation deposition of C-N films

Gilberto Leggieri; Armando Luches; Alessio Perrone; S. Acquaviva; Rodica Alexandrescu; Ion N. Mihailescu; Joseph Zemek; Paolo Mengucci

doi:10.1117/12.232208

11 March 1996 Reactive laser ablation deposition of C-N films

Gilberto Leggieri, Armando Luches, Alessio Perrone, S. Acquaviva, Rodica Alexandrescu, Ion N. Mihailescu, Joseph Zemek, Paolo Mengucci

Author Affiliations +

Proceedings Volume 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics; (1996) https://doi.org/10.1117/12.232208
Event: ALT '95 International Conference: Advanced Materials for Optics and Optoelectronics, 1995, Prague, Czech Republic

Abstract

We report a study of the characteristics of thin films deposited at room temperature on Si and KBr substrates by XeCl laser ablation of graphite in low pressure (0.25-2.5 mbar) nitrogen and ammonia atmospheres. Very hard films, with a very high electrical resistivity were obtained. The deposition rates decrease with increasing ambient pressure. N/C atomic ratios up to 0.6 were calculated from backscattering measurements. Different diagnostic techniques (XPS, IR absorption spectroscopy, etc.) demonstrate the formation of carbon nitride with a prevalent graphite-like structure. Films deposited in NH₃ are thinner and present a lower quantity of N atoms bound to C atoms than films deposited in N₂ at the same ambient pressure.

Citation Download Citation

Gilberto Leggieri, Armando Luches, Alessio Perrone, S. Acquaviva, Rodica Alexandrescu, Ion N. Mihailescu, Joseph Zemek, and Paolo Mengucci "Reactive laser ablation deposition of C-N films", Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); https://doi.org/10.1117/12.232208

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