Modulation Spectroscopy As A Technique For Semiconductor Characterization

Fred H. Pollak

doi:10.1117/12.931700

30 April 1981 Modulation Spectroscopy As A Technique For Semiconductor Characterization

Fred H. Pollak

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931700
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

In modulation spectroscopy the optical spectra of a solid is modified in some manner by the periodic variation of the measurement condition. This modulated perturbation gives rise to sharp, differential-like optical features in the region of photon energies where optical excitation processes occur. Changes in reflectance or transmittance as small as 10^-6 - 10^-7 can be observed using phase-sensitive detection. The extensive fundamental experimental and theoretical work done in this area during the past 15 years has provided the necessary framework to develop the technique into a powerful tool for materials, device and processing characterization. In this paper we review a number of the applica-tions of modulation spectroscopy including determination of topographical variations in composition and carrier concentration, the nature of potentials and strains at hetero-junction interfaces, properties of the space-charge region including the semiconductor/ electrolyte interface, ion-implanted (including laser-annealed) semiconductors polariza-tion properties of ferroelectric materials, etc.

Citation Download Citation

Fred H. Pollak "Modulation Spectroscopy As A Technique For Semiconductor Characterization", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931700

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