Paper
14 June 1996 Quarter- and subquarter-micron deep-UV lithography with chemically amplified positive resist
Yasunobu Onishi, Kazuo Sato, Kenzi Chiba, Masafumi Asano, Hirokazu Niki, Rumiko Horiguchi Hayase, Takao Hayashi
Author Affiliations +
Abstract
The resist performance for quarter- and sub-quarter-micron domains using partially t- butoxycarbonylmethylated poly(4-vinylphenol) (BOCM-PVP) as a polymer dissolution inhibitor is reported. This resist contains some additives to improve resolution and process stability. This resist has high resolution, with linearity down to 0.225 micrometer L & S at 38 mJ/cm2 on a KrF excimer laser stepper (NA equals 0.5, sigma equals 0.5) with a COG mask. Using a halftone phase shifting mask, 0.175 micrometer L & S patterns are resolved with a 1 micrometer depth of focus (DOF) on a KrF excimer stepper (NA equals 0.5, sigma equals 0.7, 1/2 annular illumination). The line width change vs. PEB temperature ((Delta) CD/(Delta) T) is 1.3 nm/degree. The line width shift over time between exposure and PEB is within plus or minus 0.01 micrometer even after 1 hr delay in a basic- contamination-free environment (NH3 less than 1 ppb).
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasunobu Onishi, Kazuo Sato, Kenzi Chiba, Masafumi Asano, Hirokazu Niki, Rumiko Horiguchi Hayase, and Takao Hayashi "Quarter- and subquarter-micron deep-UV lithography with chemically amplified positive resist", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241861
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Polymers

Excimer lasers

Photoresist processing

Halftones

Lithography

Photomasks

Phase shifting

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