N2O-based tunnel oxides

Jack C. Lee; Anthony I. Chou; Kafai Lai; Kiran Kumar

doi:10.1117/12.221130

15 September 1995 N2_O-based tunnel oxides

Jack C. Lee, Anthony I. Chou, Kafai Lai, Kiran Kumar

Author Affiliations +

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221130
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

Scaling down of the tunnel oxides allows reduction of the internal programming voltages and the memory cell size, and simplification of the peripheral circuit design related to highvoltage operation. However, several serious factors limit the scaling down of conventional thermal oxides. This includes the reduction in endurance which is related to charge trapping and time-dependent dielectric breakdown of the tunnel oxide. Leakage currents such as stressinduced leakage current and direct tunneling current are becoming a dominant factor as thicknesses are scaled down. Other factors that might limit the scaling of conventional thermally grown oxides include high defect and pinhole density which affect the manufacturing yield and device reliability, the ineffectiveness of thermal oxides in blocking diffusion of dopants, metals and impurities, excessive interface state density generation under various types of electrical and radiation stresses, and inadequate charge-to-breakdown and time-to-breakdown values. Furthermore, it has been reported that post-oxidation processes such as plasma exposure during metal etching can degrade thin oxides.

Citation Download Citation

Jack C. Lee, Anthony I. Chou, Kafai Lai, and Kiran Kumar "N2_O-based tunnel oxides", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221130

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