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A CoSi2/strained-Si1-xGex-Schottky barrier detector is proposed for detection of infrared radiation in the 3 - 5 micrometers window. It could be a substitute for PtSi/Si-Schottky barrier detectors, which have already been integrated with readout electronics, but which imply the disadvantage of having the metal Pt in the line as a possible source of contamination. A silicidation study on strained Si1-xGex-layers with sacrificial Si-layers on top has been carried out to realize CoSi2/strained-Si1-xGex-interfaces, which will form the heart of the detector. The possibilities to integrate this detector with readout electronics are critically reviewed. First CoSi2/Si1-xGex-detectors have been processed which yield barrier heights as low as 229 meV.
Sabine Kolodinski,Ricardo A. Donaton,Elisenda Roca,Matty Caymax, andKaren Maex
"CoSi2/Si1-xGex interfaces for Schottky barrier infrared detectors with extended detection regime", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218186
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Sabine Kolodinski, Ricardo A. Donaton, Elisenda Roca, Matty Caymax, Karen Maex, "CoSi2/Si1-xGex interfaces for Schottky barrier infrared detectors with extended detection regime," Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218186