248-nm DUV MoSiON embedded phase-shifting mask for 0.25 micrometer lithography

Giang T. Dao; Gang Liu; Robert F. Hainsey; Jeff N. Farnsworth; Yasuo Tokoro; Susumu Kawada; Tsuneo Yamamoto; Nobuyuki Yoshioka; Akira Chiba; Hiroaki Morimoto

doi:10.1117/12.212781

3 July 1995 248-nm DUV MoSiON embedded phase-shifting mask for 0.25 micrometer lithography

Giang T. Dao, Gang Liu, Robert F. Hainsey, Jeff N. Farnsworth, Yasuo Tokoro, Susumu Kawada, Tsuneo Yamamoto, Nobuyuki Yoshioka, Akira Chiba, Hiroaki Morimoto

Author Affiliations +

Proceedings Volume 2512, Photomask and X-Ray Mask Technology II; (1995) https://doi.org/10.1117/12.212781
Event: Photomask Japan 1995, 1995, Kanagawa, Japan

Abstract

Over the past five years worldwide efforts have been made to develop new techniques for optical lithography enhancement. These techniques include optical proximity correction, off-axis illumination, pupil filtering and phase-shifting mask (PSM). Among many phase-shifting mask approaches, embedded PSM (EPSM) method has drawn significant interest due to its relatively simple reticle fabrication process and excellent lithographic performance, in particular, for dark field mask layers such as contact and via holes. Perhaps, the most difficult task in materializing the EPSM technology is the creation of a thin film structure that controls both phase and transmission. In addition, this film structure must withstand severe environment of mask making process and yet can be inspected and repaired successfully using currently available tool sets. The newly developed MoSiON material meets these requirements and has demonstrated a feasibility for DUV EPSM pilot production. In this paper, characteristics of the DUV lifetime test results. Details of reticle fabrication process including e-beam writing, dry etching, inspection and repair will be presented along with chemical durability data and process capability. Finally, wafer level lithographic performance for contact holes printed on a step-and-scan and a projection aligner will be shown to demonstrate lithographic performance of 248 nm DUV EPSM for 0.25 micrometer lithography.

Citation Download Citation

Giang T. Dao, Gang Liu, Robert F. Hainsey, Jeff N. Farnsworth, Yasuo Tokoro, Susumu Kawada, Tsuneo Yamamoto, Nobuyuki Yoshioka, Akira Chiba, and Hiroaki Morimoto "248-nm DUV MoSiON embedded phase-shifting mask for 0.25 micrometer lithography", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212781

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