Paper
9 June 1995 High-resolution surface imaging process using difunctional silylating reagent B(DMA)MS for ArF excimer laser lithography
Katsumi Maeda, Takeshi Ohfuji, Naoaki Aizaki, Etsuo Hasegawa
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Abstract
This paper describes the silylation properties and the lithographic performance of ArF (193 nm) surface imaging process with bis(dimethylamino)methylsilane [B(DMA)MS]. The silicon concentration of silylated region with B(DMA)MS in liquid phase is much higher (2 times) than that for the conventional silylation with dimethylsilyldimethylamine (DMSDMA) in vapor phase. The excellent resolution of 0.12 micrometers L/S and practical DOF (1.0 micrometers in a range for 0.18 micrometers L/S) have been achieved using ArF exposure system with a conventional binary mask under a normal illumination. Further, the resolution of 0.088 micrometers has been obtained with a Levenson-type phase shifting mask.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsumi Maeda, Takeshi Ohfuji, Naoaki Aizaki, and Etsuo Hasegawa "High-resolution surface imaging process using difunctional silylating reagent B(DMA)MS for ArF excimer laser lithography", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210357
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Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Image processing

Lithography

Photomasks

Liquids

Excimer lasers

Phase shifting

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