Optical effect in small geometry devices

B. B. Pal; R. K. Sahoo

doi:10.1117/12.206871

24 April 1995 Optical effect in small geometry devices

B. B. Pal, R. K. Sahoo

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206871
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

With the advancement of high bit rate optical communication system, there is a need for a high speed photo detector. Results have been presented for a n⁺-n^-- n⁺ small geometry GaAs diode under optical illumination. The potential at the n⁺-nl-interface is found to be more negative due to the photovoltaic effect. The current increases with the increase in absorption coefficient and radiation flux density. The quantum efficiency is over 70% in the wavelength spectrum 0.6 - 0.8 um being more than 80% at 0.76 um. The device can be used in GaAs material for 1.55 um system.

Citation Download Citation

B. B. Pal and R. K. Sahoo "Optical effect in small geometry devices", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206871

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