Single-mode high-power lasers emitting at 980 nm

Niloy K. Dutta; William S. Hobson; John Lopata; E. Fred Schubert; M. Passlack

doi:10.1117/12.208442

28 April 1995 Single-mode high-power lasers emitting at 980 nm

Niloy K. Dutta, William S. Hobson, John Lopata, E. Fred Schubert, M. Passlack

Proceedings Volume 2382, Laser Diodes and Applications; (1995) https://doi.org/10.1117/12.208442
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The fabrication and performance characteristics of InGaAs/GaAsInGaP strained quantum well lasers are described. Lasers with low threshold current, high output power and excellent reliability have been fabricated. In_0.2Ga_0.8As/GaAs lasers emitting near 1 micrometers are useful as pump sources for erbium doped optical fiber amplifiers.

Citation Download Citation

Niloy K. Dutta, William S. Hobson, John Lopata, E. Fred Schubert, and M. Passlack "Single-mode high-power lasers emitting at 980 nm", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208442

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