Paper
19 August 1994 Highly stable U-band microstrip GaAs Gunn oscillator
Dade Zhao, Yanmao Deng, Wenhui Zhang, Honggu Qin, Jinrong Cao, Kai Shao
Author Affiliations +
Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.182999
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
A high performance and stabilized U-band microstrip GaAs Gunn Oscillator on duroid 6002 is reported. It is stabilized using a dielectric resonator and a block (stub) circuit resonator in a unique hybrid configuration. Frequency stability of +/- 1.2 ppm/ degree(s)C is achieved over 10 to 60 degree(s)C temperature range. A highest 102 mW of cw output power at 44.6 GHz is obtained from a 108 mW diode.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dade Zhao, Yanmao Deng, Wenhui Zhang, Honggu Qin, Jinrong Cao, and Kai Shao "Highly stable U-band microstrip GaAs Gunn oscillator", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); https://doi.org/10.1117/12.182999
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Oscillators

Resonators

Dielectrics

Gallium arsenide

Diodes

Temperature metrology

Resistance

RELATED CONTENT

The mm-wave MESFET oscillators characterization
Proceedings of SPIE (October 01 1991)
A highly stable u-band microstrip GaAs Gunn oscillator
Proceedings of SPIE (January 01 1994)
Optimization of pulsed GaAs IMPATT diodes for 200 GHz
Proceedings of SPIE (September 09 1999)
New Indium Phosphide Sources
Proceedings of SPIE (February 27 1981)

Back to Top