Effects on IC quality of 5X reticle repair using FIB with stain reduction

Philip D. Prewett; Brian Martin; John G. Watson; Rik M. Jonckheere

doi:10.1117/12.174127

1 May 1994 Effects on IC quality of 5X reticle repair using FIB with stain reduction

Philip D. Prewett, Brian Martin, John G. Watson, Rik M. Jonckheere

Author Affiliations +

Proceedings Volume 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII; (1994) https://doi.org/10.1117/12.174127
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Focused ion beam repair of opaque defects in 5X reticles produces post repair stains which result in ghost defects in wafer prints produced at G-line, I-line, and DUV wavelengths. These stains can be removed using a post repair plasma process which restores transmission to almost 100%. However, a new in situ process is preferred which reduces stains to acceptable levels. The key to the new process is an understanding of factors affecting sputter yield. The effectiveness of the in situ antistain procedure is demonstrated through wafer lithography at all three wavelengths showing an absence of ghost defects following repair.

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Philip D. Prewett, Brian Martin, John G. Watson, and Rik M. Jonckheere "Effects on IC quality of 5X reticle repair using FIB with stain reduction", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174127

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KEYWORDS

Reticles

Semiconducting wafers

Deep ultraviolet

Ion beams

Lithography

Opacity

Plasma

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