AFM application on the topography study of stack cell DRAM processes

Daniel Hao-Tien Lee; Gwo-Yuh Shiau

doi:10.1117/12.174163

1 May 1994 AFM application on the topography study of stack cell DRAM processes

Daniel Hao-Tien Lee, Gwo-Yuh Shiau

Author Affiliations +

Proceedings Volume 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII; (1994) https://doi.org/10.1117/12.174163
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

The stacked cell design of DRAM processes for lithography considerations has suffered severe topography step-height and unsmooth surface issues. In addition, the stability and uniformity control of thin film processes on the backend process can affect lithography process to a great extent. In this study, the AFM (atomic force microscope) has been used to study topography issues of a typical DRAM process. The detailed information concerning the topography step- height, flow angle, local unsmooth surface, etc., have been clearly identified. These studies provide useful information for future process development and improvement.

Citation Download Citation

Daniel Hao-Tien Lee and Gwo-Yuh Shiau "AFM application on the topography study of stack cell DRAM processes", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174163

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE