Dissolution characteristics optimization for chemically amplified positive resist

Toshiro Itani; Haruo Iwasaki; Masashi Fujimoto; Kunihiko Kasama

doi:10.1117/12.175330

16 May 1994 Dissolution characteristics optimization for chemically amplified positive resist

Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Kunihiko Kasama

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175330
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Dissolution kinetics of a 3-component chemically amplified positive resist, which consists of t-BOC protected phenolic resin, benzenesulfonic acid derivative as a PAG and an additional dissolution inhibitor, have been investigated under various conditions. Especially, the effects of t-BOC protection ratio and molecular weight of the base resin have been studied. In a previous paper, we reported that the dissolution rate R of a 2- component positive resist was determined by one rate determining step, i.e., developer penetration into hydrophobic t-BOC protected phenolic resin. Rapid formation of surface insoluble layer which induced T-toping profiles deteriorated its original resist performance. In this paper, we evaluated both t-BOC protection ratio and the molecular weight dependencies of the dissolution characteristics. The 3-component resist evaluated did not produce distinct T-topping profile when time duration between exposure and PEB was within 30 minutes.

Citation Download Citation

Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, and Kunihiko Kasama "Dissolution characteristics optimization for chemically amplified positive resist", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175330

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