Epitaxial diamond Schottky diode on p+-substrate

Wolfgang Ebert; A. Vescan; Thomas H. Borst; E. Olaf Weis; Erhard Kohn

doi:10.1117/12.171753

1 April 1994 Epitaxial diamond Schottky diode on p+-substrate

Wolfgang Ebert, A. Vescan, Thomas H. Borst, E. Olaf Weis, Erhard Kohn

Proceedings Volume 2151, Diamond-Film Semiconductors; (1994) https://doi.org/10.1117/12.171753
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Schottky diodes have been fabricated on homeoepitaxial p-doped diamond layers grown on p⁺-diamond substrates. Two distinctly different configurations were investigated to study the influence of the p⁺-substrate conductivity and obtain a rectifying characteristic with low ohmic loss. A series resistance of 8(Omega) was obtained at 500 degree(s)C for strong forward bias and a 5 X 10^-5 cm² contact area. Due to the low activation energy of the p⁺-substrate conductivity the minimum series resistance at R.T was 70(Omega) . To our knowledge, these are the lowest series resistances reported so far for a diamond Schottky diode enabling extremely high current densities of 10³ A/cm² in combination with a current rectification ratio of 10⁵ at +/- 2V.

Citation Download Citation

Wolfgang Ebert, A. Vescan, Thomas H. Borst, E. Olaf Weis, and Erhard Kohn "Epitaxial diamond Schottky diode on p+-substrate", Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); https://doi.org/10.1117/12.171753

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