Polarization of the subthreshold emission and diagnostic of mechanical strain in semiconductor lasers and light-emitting diodes

Alexander A. Ptashchenko; Ludvig P. Prokopovich; Michael V. Deych

doi:10.1117/12.191993

31 October 1994 Polarization of the subthreshold emission and diagnostic of mechanical strain in semiconductor lasers and light-emitting diodes

Alexander A. Ptashchenko, Ludvig P. Prokopovich, Michael V. Deych

Author Affiliations +

Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191993
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine

Abstract

A measurement system with a rotating polaroid was constructed which allows us to detect the degree of the light polarization ((rho) ) of 0.1%. The dependencies of r were studied on pumping current (I), axial stress ((sigma) ) and temperature (T) for AlGaAs diode lasers (DL), as well as variations of (rho) with the parameters of the detecting system. The validity of the one-dimensional Cassidy's model was argued to describe the polarization phenomena in the active region of DL. The obtained data demonstrate the possibility to evaluate the mechanical strain in the active layer of DL and estimate the difference in reflectivities between transverse electric (TE) and transverse magnetic (TM) modes of the output at varying mechanical strain. The developed experimental system and technique are simple, sensitive and robust enough to be used under the conditions of industrial producing DLs.

Citation Download Citation

Alexander A. Ptashchenko, Ludvig P. Prokopovich, and Michael V. Deych "Polarization of the subthreshold emission and diagnostic of mechanical strain in semiconductor lasers and light-emitting diodes", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191993

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