Paper
22 October 1993 Effect of high-temperature treatment in different ambient on the properties of SnO2:F
Georgi D. Beshkov, Kroum M. Kolentsov, D. B. Dimitrov, Lilyana S. Yourukova, A. S. Rachkova, M. T. Kamenova
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Abstract
The influence of an additional high-temperature treatment of SnO2 : F thin films prepared on silicon substrates is studied. The films are deposited by a spray pyrolytic technique at various substrate temperatures and deposition times. As-deposited SnO2 : F thin films are further annealed at temperature of 1000 degree(s)C in oxygen environment for times of 15 to 90 min as well as by rapid thermal annealing in vacuum of 6, 7 X 10-3 Pa for 1 min at the same annealing temperature. The changes of the film characteristics after the treatment are studied. Some peculiarities of the morphology film surface both on the deposition conditions and the various thermal treatment are investigated. Possible mechanisms explaining the obtained experimental results are discussed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georgi D. Beshkov, Kroum M. Kolentsov, D. B. Dimitrov, Lilyana S. Yourukova, A. S. Rachkova, and M. T. Kamenova "Effect of high-temperature treatment in different ambient on the properties of SnO2:F", Proc. SPIE 2017, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XII, (22 October 1993); https://doi.org/10.1117/12.161984
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KEYWORDS
Silicon films

Thin films

Oxygen

Silicon

Annealing

Refractive index

Resistance

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