Free-boundary problems arising in processing of semiconductors

Avner Friedman

doi:10.1117/12.148427

22 July 1993 Free-boundary problems arising in processing of semiconductors

Avner Friedman

Proceedings Volume 1919, Smart Structures and Materials 1993: Mathematics in Smart Structures; (1993) https://doi.org/10.1117/12.148427
Event: 1993 North American Conference on Smart Structures and Materials, 1993, Albuquerque, NM, United States

Abstract

In this work we discuss two free boundary problems which arise in semiconductor processing. The first problem is concerned with deposition of titanium silicide over a wafer, a process which results in three layers of chemicals: Ti, TiSi and TiSi₂ and three free-boundary interfaces. The second problem is concerned with the growth of loop dislocations in crystal, which develop as a result of implanting impurities and rapid thermal annealing. Existence results and properties of the solutions are discussed.

Citation Download Citation

Avner Friedman "Free-boundary problems arising in processing of semiconductors", Proc. SPIE 1919, Smart Structures and Materials 1993: Mathematics in Smart Structures, (22 July 1993); https://doi.org/10.1117/12.148427

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