Tailoring of transport dynamics by recombination center engineering of copper-compensated GaAs

Michael S. Mazzola; David C. Stoudt; Randy A. Roush

doi:10.1117/12.146541

9 June 1993 Tailoring of transport dynamics by recombination center engineering of copper-compensated GaAs

Michael S. Mazzola, David C. Stoudt, Randy A. Roush

Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146541
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

We report recent subnanosecond photoconductive measurements on a p-i-n device made from a copper-compensated silicon-doped semi-insulating GaAs (GaAs:Si:Cu) substrate. Photoconductivity in this relatively large volume device (0.05 X 0.5 X 1.0 cm³) is generated by extrinsic absorption of a 1-micrometers laser pulse, and optically quenched with a 2-micrometers laser pulse. It is shown experimentally that these large, high- power (multimegawatt) switches have the potential to switch subnanosecond pulses when a copper-compensated GaAs material with suitable fast electron-hole-pair recombination rate is engineered. Test and evaluation of BOSS devices with subnanosecond switching performance is reported. In one case, observation of an electron-hole pair recombination time constant of 0.25 ns is reported in GaAs:Si:Cu irradiated with a neutron dose of 1.8 X 10¹⁵ cm^-2, a factor of seven faster than previously reported.

Citation Download Citation

Michael S. Mazzola, David C. Stoudt, and Randy A. Roush "Tailoring of transport dynamics by recombination center engineering of copper-compensated GaAs", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); https://doi.org/10.1117/12.146541

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