AlGaSb/GaSb metal-semiconductor-metal detectors grown on InP substrates

Yuqi Wang; Malvin C. Teich; Wen I. Wang

doi:10.1117/12.131262

23 October 1992 AlGaSb/GaSb metal-semiconductor-metal detectors grown on InP substrates

Yuqi Wang, Malvin C. Teich, Wen I. Wang

Author Affiliations +

Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131262
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

Al_0.5Ga_0.5Sb/GaSb metal-semiconductor-metal (MSM) detectors have been prepared on semi-insulating InP substrates. The molecular beam epitaxially grown samples on differently orientated substrates exhibit different types of conductivity. The Schottky barrier height between Al and Al_0.5Ga_0.5Sb grown on (311)B oriented substrates is 0.6 eV, while the Al contacts on (100) sample exhibit ohmic behavior. The results show that the Sb- deficiency related p-type native defect density is significantly reduced in the samples grown on (311)B oriented substrates. The 3-dB device response bandwidth is about 1 GHz at room temperature and beyond 10 GHz at 77 K.

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Yuqi Wang, Malvin C. Teich, and Wen I. Wang "AlGaSb/GaSb metal-semiconductor-metal detectors grown on InP substrates", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131262

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