Investigation of surface-related electrical crosstalk in Hg1-xCdxTe photodiode arrays

Henry X. Yuan; Fei Ming Tong

doi:10.1117/12.138615

10 December 1992 Investigation of surface-related electrical crosstalk in Hg_1-xCd_xTe photodiode arrays

Henry X. Yuan, Fei Ming Tong

Proceedings Volume 1735, Infrared Detectors: State of the Art; (1992) https://doi.org/10.1117/12.138615
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

A theoretical investigation of electrical crosstalk induced by surface channel was made for Hg_1-xCd_xTe n-on-p photodiode arrays, by using a model based on diode surface channel current theory. An analytic expression of crosstalk, which is an exponential function of the inversion layer charge density, element spacing, p-n junction resistance-area product, and surface electron mobility, was deduced. The dependence of crosstalk on some related device parameters, such as the positive fixed interface charge density, etc., was calculated and discussed. The results show that better control of the substrate surface potential, as well as careful choice of some device parameters, is significant for reducing electrical crosstalk.

Citation Download Citation

Henry X. Yuan and Fei Ming Tong "Investigation of surface-related electrical crosstalk in Hg_1-xCd_xTe photodiode arrays", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138615

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