Defect pool gap-state distribution in a-Si:H in equilibrium and under photoexcitation

Gottfried H. Bauer; C.-D. Abel; G. Schumm

doi:10.1117/12.130560

9 December 1992 Defect pool gap-state distribution in a-Si:H in equilibrium and under photoexcitation

Gottfried H. Bauer, C.-D. Abel, G. Schumm

Author Affiliations +

Proceedings Volume 1729, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry; (1992) https://doi.org/10.1117/12.130560
Event: Optical Materials Technology for Energy Efficiency and Solar Energy, 1992, Toulouse-Labege, France

Abstract

Based on weak bond dangling bond conversion, a complete quantitative solution for the distribution of gap states in a-Si:H in equilibrium and general nonequilibrium conditions can be derived. In this picture the density of states distribution, apart from the structural equilibration between Si-Si-bonds, Si-H-bonds, and Si-dangling bonds and a Gaussian spread of available defect energies, is completely governed by the concentrations of free carriers and the resulting electronic occupation functions in the gap. The model is shown to account for the vast majority of experimental data regarding equilibrium and so called saturated defect densities, such as their dependence on temperature, illumination intensity, band gap, hydrogen content and slope of band tails. Moreover experimental data of photoconductivity, μr-products of electrons and holes versus temperature and light intensity as well as versus position of Fermi level in intrinsic and moderately doped a-Si:H films have been predicted more accurately than by any standard defect model.

Citation Download Citation

Gottfried H. Bauer, C.-D. Abel, and G. Schumm "Defect pool gap-state distribution in a-Si:H in equilibrium and under photoexcitation", Proc. SPIE 1729, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry, (9 December 1992); https://doi.org/10.1117/12.130560

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE