Delta doping for deep-level analysis in semiconductor diodes

Joachim Piprek; H. Kostial; Peter Krispin; C. H. Lange; Karl W. Boer

doi:10.1117/12.60491

1 July 1992 Delta doping for deep-level analysis in semiconductor diodes

Joachim Piprek, H. Kostial, Peter Krispin, C. H. Lange, Karl W. Boer

Proceedings Volume 1679, Physics and Simulation of Optoelectronic Devices; (1992) https://doi.org/10.1117/12.60491
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Recombination via deep level centers within a delta doped sheet in GaAs diodes is investigated as a function of deep level energy and local sheet position within the junction. Current-density versus voltage (jV) characteristics of pn-junctions are calculated varying the sheet position and energy of a single level, and a double level deep center (Ti). With homogeneous photogeneration, the changes in open circuit voltage V_oc and fill factor of photodiodes are determined as a function of such delta doping. Schottky barriers on MBE-grown GaAs with a planar thin Ti doped sheet are examined by capacitance-voltage (CV) measurements. The corresponding charge profiles N(W) are compared with modeling results.

Citation Download Citation

Joachim Piprek, H. Kostial, Peter Krispin, C. H. Lange, and Karl W. Boer "Delta doping for deep-level analysis in semiconductor diodes", Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); https://doi.org/10.1117/12.60491

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